NY8320NSC/NY8320NSCP
高Tg、低膨脹系數、高模量
優秀的耐熱性及耐CAF性能
優異通孔可靠性及PCB加工性
無鹵
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CPU/GPU -
應用處理器Application processer
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閃存NAND Flash
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手機動態內存mDRAM
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射頻系統級封裝 -
天線封裝RF SiP
NY8320NSC基板典型性能 Typical Properties for NY8320NSC Laminate
| 屬性 Property | 項目 Item | 測試方法 IPC-TM-650 | 測試條件 Test Condition | 單位 Unit | 典型值 Typical Value | |
| 熱性能 Thermal | 玻璃態轉換溫度 Tg Glass Transition Temperature | 2.4.25 | DSC | ℃ | \ | |
| 2.4.24 | TMA | ℃ | 220~240 | |||
| 2.4.24.4 | DMA | ℃ | 260~290 | |||
| X/Y軸熱膨脹系數（1078×2） X/Y-axis CTE | 2.4.24.5 | ＜Tg,TMA | PPM/℃ | 7 | ||
| Z軸熱膨脹系數（2116×8） Z-axis CTE | 2.4.24 | ＜Tg,TMA | PPM/℃ | 15 | ||
| ＞Tg,TMA | PPM/℃ | 55 | ||||
| 2.4.24 | 50~260℃ | % | 0.6~0.8 | |||
| 熱分解溫度 Td Decomposition Temperature | 2.4.24.6 | TGA(5%W.L) | ℃ | 430 | ||
| 耐熱性 T288 Thermal Resistance | 2.4.24.1 | Clad | Min | ＞60 | ||
| Etched | Min | ＞60 | ||||
| 電性能 Electrical | 介電常數 Dk (R/C:50%) Permittivity | 1MHz | 2.5.5.9 | C-24/23/50 | — | \ |
| 1GHz | 4.5 | |||||
| 10GHz | SPDR method | 4.4 | ||||
| 介質損耗 Df (R/C:50%) Loss Tangent | 1MHz | 2.5.5.9 | C-24/23/50 | — | \ | |
| 1GHz | — | 0.006 | ||||
| 10GHz | SPDR method | 0.007 | ||||
| 體積電阻 Volume Resistivity | 2.5.17.1 | C-96/35/90 | MΩ-cm | 1.0×109 | ||
| 表面電阻 Surface Resistivity | MΩ | 1.0×108 | ||||
| 物理性能 Physical | 吸水率 Water Absorption | 2.6.2.1 | E-1/105+D-24/23 | % | 0.1 | |
| 剝離強度(HTE) Peel Strength | Toz | 2.4.8 | As Received | N/mm | \ | |
| 剝離強度(RTF) Peel Strength | Toz | \ | ||||
| 剝離強度(VLP) Peel Strength | Toz | 0.7 | ||||
| 彎曲模量 Flexural Modulus | GB / T 9341-2018 | @RT | Gpa | 29\30 | ||
| 楊氏模量 Young's Modulus | GB / T 1040.1-2018 | @RT | Gpa | 29\30 | ||
| 耐燃性 Flame Resistance | UL-94 | A&E-4/125 | — | V-0 | ||
